Avalanche photodiode structure

Details Avalanche photodiode structure Avalanche photodiode structure

2005-11-23

2008-10-07

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S021000, C257S199000, C257S438000, C257SE31064, C257SE31116

Reexamination Certificate

active

07432537

ABSTRACT:
An avalanche photodiode (APD) includes an anode layer, a cathode layer, an absorption layer between the anode layer and the cathode layer, a first multiplying stage between the absorption layer and the cathode layer, a second multiplying stage between the first multiplying stage and the cathode layer, and a carrier relaxation region between the first and second multiplying stages. Each multiplying stage includes, in the direction of drift of electrons, a first layer that is doped with acceptors, a second layer that is substantially undoped, a third layer that is doped with acceptors, a fourth layer that is substantially undoped, and a fifth layer that is doped with donors.

REFERENCES:
patent: 6747296 (2004-06-01), Clark
patent: 2002/0074555 (2002-06-01), Kim et al.
patent: 2004/0178421 (2004-09-01), Kuan et al.

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