Avalanche photodiode including a multiplication layer and a phot

Details Avalanche photodiode including a multiplication layer and a phot Avalanche photodiode including a multiplication layer and a phot

1992-12-21

1994-08-16

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257 15, 257 21, 257438, H01L 2714, H01L 3100

Patent

active

053389476

ABSTRACT:
An avalanche photodiode includes a multiplication layer and a photoabsorption layer, and the multiplication layer is formed of a semiconductor superlattice structure composed of a number of well layers each of which is formed of a short period superlattice of at least two kinds of semiconductors and which can be equivalently regarded to be a mixed crystal of the at least two kinds of semiconductors. In the short period superlattice, the mini-bands are formed within the superlattice well layers having its effective forbidden band width, which is larger than the forbidden band width in a bulk condition of a semiconductor layer constituting a well in the short period superlattice. Thus, the dark current due to the inter-band tunnel transition within the same well layer is decreased. Therefore, a low noise characteristics and a low noise and high response speed characteristics obtained by a high ionization rate ration can be simultaneously realized.

REFERENCES:
patent: 5187553 (1993-02-01), Makita
patent: 5204539 (1993-04-01), Tsuji et al.
F. Capasso et al., "Enhancement of electron impact ionization in a superlattice; A new avalanche photodiode with a large ionization rate ratio," Appl. Phys. Lett. 40(1), Jan. 1, 1982, pp. 38-40.
T. Kagawa ewt al., "Impact ionization rates in an InGaAs/InAlAs superlattice," Appl. Phys. Lett. 55(10), Sep. 4, 1989, pp. 993-995.

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