1991-04-05
1992-10-20
Mintel, William
357 13, 357 52, 357 56, H01L 2714
Patent
active
051574730
ABSTRACT:
For providing an avalanche photodiode having a good guard ring effect and a high speed response, a body of semiconductor materials is prepared, which includes a window layer of n-type InP epitaxially grown on an avalanche multiplication layer of n.sup.+ -type InP. The window layer is selectively removed so as to expose the avalanche multiplication layer, thereby providing a recessed portion therein. After a p-type impurity is selectively introduced into the window layer to form a guard ring therein, a p-type impurity is selectively introduced into both the exposed avalanche multiplication layer and the guard ring to provide a PN junction therein.
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Kabushiki Kaisha Toshiba
Mintel William
Tran Minhloan
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