Avalanche photodiode having guard ring

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357 13, 357 52, 357 56, H01L 2714

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active

051574730

ABSTRACT:
For providing an avalanche photodiode having a good guard ring effect and a high speed response, a body of semiconductor materials is prepared, which includes a window layer of n-type InP epitaxially grown on an avalanche multiplication layer of n.sup.+ -type InP. The window layer is selectively removed so as to expose the avalanche multiplication layer, thereby providing a recessed portion therein. After a p-type impurity is selectively introduced into the window layer to form a guard ring therein, a p-type impurity is selectively introduced into both the exposed avalanche multiplication layer and the guard ring to provide a PN junction therein.

REFERENCES:
patent: 4556494 (1987-04-01), Kobayashi et al.
patent: 4586067 (1986-04-01), Webb
patent: 4587544 (1986-05-01), Webb
patent: 4906583 (1990-03-01), Kagawa et al.
patent: 5053837 (1991-10-01), Tonai
Patent Abstracts of Japan, vol. 12, No. 193 (E-617) (3040) Jun. 4, 1988, and JP-A-62 295472 (Fujitsu Ltd) Dec. 22, 1987.
Patent Abstracts of Japan, vol. 11, No. 20 (E-472) (2467) Jan. 20, 1987 and JP-A-61 191082 (Fujitsu Ltd.) Aug. 25, 1986.
Patent Abstracts of Japan, vol. 6, No. 87 (E-108) (965) May 25, 1982 and JP-A-57 23278 (Nippon Denshin Denwa Kosha) Feb. 6, 1982.
Chi et al., "Planar InP/InGaAsP Three-Dimensional Graded Junction Avalanche Photodiode", IEEE, vol. ED-34, No. 11, Nov. 1987.

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