Avalanche photodiode having controlled breakdown voltage

Details Avalanche photodiode having controlled breakdown voltage Avalanche photodiode having controlled breakdown voltage

2008-10-01

2011-10-25

Menz, Douglas (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Avalanche diode

C257S431000

Reexamination Certificate

active

08044436

ABSTRACT:
Avalanche photodiodes and methods for forming them are disclosed. The breakdown voltage of an avalanche photodiode is controlled through the inclusion of a diffusion sink that is formed at the same time as the device region of the photodiode. The device region and diffusion sink are formed by diffusing a dopant into a semiconductor to form a p-n junction in the device region. The dopant is diffused through a first diffusion window to form the device region and a second diffusion window to form the diffusion sink. The depth of the p-n junction is based on an attribute of the second diffusion window.

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Chaudhari, Chandra P., “U.S. Appl. No. 11/682,999 Restriction Requirement May 12, 2010”, , Publisher: USPTO, Published in: US.

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