Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-03-22
2005-03-22
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S441000
Reexamination Certificate
active
06870239
ABSTRACT:
An avalanche photodiode comprises, in various implementations, a p-doped absorption region fabricated from a first material and joined along a hetero-junction with one side of an intrinsic charge-carrier multiplication region fabricated from a second material. Situated on an opposite side of the multiplication region is an n-doped diode cathode. Under reverse bias, the p-doped and n-doped regions assume, respectively, a negative charge and a positive charge and an electric field is present in the multiplication region. The first and second materials are selected to one of (i) minimize and (ii) render non-existent any conduction-band-dependent potential barrier opposing the diffusion of electrons from the absorption region into the multiplication region. Additionally, in various implementations, the first and second materials are furthermore selected to one of (i) minimize and (ii) render non-existent any valence-band-dependent potential barrier opposing the movement of holes from the multiplication region into the absorption region. The thickness of the absorption region in alternative implementations is indicated by the diffusion-length characteristics of the first material.
REFERENCES:
patent: 4203124 (1980-05-01), Gordon et al.
patent: 4326211 (1982-04-01), Smeets
patent: 4366377 (1982-12-01), Notthoff et al.
patent: 4442444 (1984-04-01), Osaka
patent: 02189984 (1990-07-01), None
Franco Louis J.
Solid State Scientific Corporation
Wilson Allan R.
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