Avalanche photodiode having a thin multilayer superlattice struc

Details Avalanche photodiode having a thin multilayer superlattice struc Avalanche photodiode having a thin multilayer superlattice struc

1991-04-18

1993-02-16

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257 21, 257458, H01L 2714, H01L 3100

Patent

active

051875535

ABSTRACT:
An avalanche photodiode includes an avalanche multiplication layer consisting of a superlattice multilayer structure in which a repeated thin multilayer of short-width well layers and short-width barrier layers is sandwiched between a well layer and a barrier layer. The width of the short-width well and barrier layers is preferably up to 100 .ANG.. In such a structure, an ionization rate of electrons in the avalanche multiplication layer increases, so that the avalanche photodiode has low-noise and high speed response performances.

REFERENCES:
patent: 4684969 (1987-08-01), Taguchi
patent: 4731641 (1988-03-01), Matsushima et al.
patent: 4982255 (1991-01-01), Tomita
Reithmaier et al., "Investigation of the Critical Layer Thickness in Elastically Strained InGaAs/GaAlAs. . . Microscopy", Appl. Phys. Lett. 54 (1), Jan. 2, 1988.
Y. Yu et al., "Impact Ionization Coefficient . . . Photodiodes Determined from Noise Measurements", Applied Physics Letters, vol. 51, No. 18, Nov. 2, 1987, pp. 133-1435.
T. Kagawa et al., "Impact Ionization Rates in an InGaAs/InAlAs Superlattice", Applied Physics Letters, vol. 55, No. 10. Sep. 4, 1989, pp. 993-995.
K. Brennan, "Theoretical Study of . . . Made From the GaInAs/AlInAs Material System", IEEE Transactions on Electron Devices, vol. ED33, No. 10, Oct. 1986, pp. 1502-1510.

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