Avalanche photodiode having a multiplication layer with superlat

Details Avalanche photodiode having a multiplication layer with superlat Avalanche photodiode having a multiplication layer with superlat

1993-11-10

1994-11-29

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257190, 257 18, 257 21, H01L 3106

Patent

active

053692926

ABSTRACT:
An avalanche photodiode in which a strained superlattice structure is used as a multiplication layer, comprising: an n.sup.+ type InP substrate; an n.sup.+ type InP epitaxial layer formed on a main surface of the substrate; an N type In.sub.1-x Al.sub.x As layer formed on the epitaxial layer; an n.sup.+ type In.sub.1-x Al.sub.x As layer formed on the N type In.sub.1-x Al.sub.x As layer, the n.sup.+ type In.sub.1-x Al.sub.x As layer having a relatively high impurity concentration more than the N type In.sub.1-x Al.sub.x As layer; the multiplication layer deposited on the n.sup.+ type In.sub.1-x Al.sub.x As layer, the multiplication layer having an In.sub.0.53 Ga.sub.0.47 As/In.sub.1-x Al.sub.x As superlattice structure; first and second p.sup.+ type In.sub.1-x Al.sub.x As layers laminated sequentially on the multiplication layer; an absorbing layer formed on the second p.sup.+ type In.sub.1-x Al.sub.x As layer, the absorbing layer being made of an In.sub.0.53 Ga.sub.0.47 As; a P type InP layer formed on the absorbing layer to reduce a surface leakage current; an In.sub.0.53 Ga.sub.0.47 As layer formed on the P type InP layer to be provided for an ohmic contact, and metal layers formed on an upper surface of the In.sub.0.53 Ga.sub.0.47 As layer and the other surface of the substrate, respectively.

REFERENCES:
patent: 5308995 (1994-05-01), Tsuji et al.

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