Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1995-08-17
1998-06-09
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257438, 257460, 257619, 257686, H01L 310328
Patent
active
057639035
ABSTRACT:
An avalanche photodiode for detecting x-rays and other radiation comprises a first substrate having a portion removed therefrom, a first insulating film formed on the first substrate, a second substrate comprising a floating zone silicon semiconductor substrate disposed on the first insulating film, an impurity region selectively formed in the second substrate at a surface corresponding to the removed portion, a PN junction formed on the second substrate, a glass substrate mounted to the second substrate, a first electrode formed on the first substrate for applying a voltage to the impurity region, a second electrode formed on the second substrate for applying a voltage to the second substrate, a third electrode formed on the glass substrate and electrically connected to the second electrode, and an integrated circuit package having a lead pin connected to the third electrode. Accordingly, a shallow depletion layer may be provided on a floating zone SOI substrate. The substrates may be joined to the glass substrate using a eutectic bonding process.
REFERENCES:
patent: 5021854 (1991-06-01), Huth
Patent Abstracts of Japan, vol. 15, No. 323 (E-1101) 16 Aug. 1991, Mayumi (03-120,875).
Patent Abstracts of Japan, vol. 14, No. 210 (E-0922) 27 Apr. 1990, Juri (2-046,770).
Patent Abstracts of Japan, vol. 14, No. 16 (E-872) 12 Jan. 1989, Yoshihiro (1-259,539).
Patent Abstracts of Japan, vol. 4, No. 44 (E-005) 5 Apr. 1980, Yoshiyuki (55-013,963).
Akamine Tadao
Koseki Osamu
Mandai Masaaki
Saitoh Yutaka
Yamanaka Junko
Seiko Instruments Inc.
Tran Minh-Loan
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