Avalanche photodiode and method of making same

Details Avalanche photodiode and method of making same Avalanche photodiode and method of making same

1980-10-17

1983-05-10

Edlow, Martin H.

357 13, H01L 2714, H01L 2990

Patent

active

043832679

ABSTRACT:
The invention is an improved avalanche photodiode having higher sensitivity at short wavelengths and a method of making it. The improvement comprises a contacting layer of varying thickness which can have a thin portion through which light enters the avalanche photodiode and a thicker portion surrounding the thin portion to which electrical contact can be made. This structure exhibits substantially greater sensitivity at wavelengths less than 500 nanometers without affecting the long wavelength sensitivity. The invention is also a method of forming the avalanche photodiode where the thicker portion and the thinner portions are sequentially formed using a two-step diffusion process.

REFERENCES:
patent: 4079405 (1978-03-01), Ohuchi et al.
patent: 4129878 (1978-12-01), Webb
L. A. Murray, K. Wang and K. Hesse, "A Review of Avalanche Photodiodes, Trends and Markets", Optical Spectra, (Apr. 1980) pp. 54-59.

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