Avalanche photodiode and a method of making same

Details Avalanche photodiode and a method of making same Avalanche photodiode and a method of making same

1985-10-30

1987-10-13

Edlow, Martin H.

357 30, 357 16, H01L 2990, H01L 2714

Patent

active

047002093

ABSTRACT:
The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surface. This photodetector includes a light-absorptive region, an active region overlying the absorptive region and having a central zone which has a greater concentration of conductivity modifiers than the remainder of the active region. A cap region overlies the first region, has the opposite conductivity type and extends a greater distance in the lateral direction than the central zone. The invention is also a method of forming this detector comprising the steps of forming a first region of the active region, embedding an excess concentration of conductivity modifiers into a portion thereof and then forming a second region of the active region on the first region. A cap region of opposite conductivity type is then formed over the active region. The cap region has a greater lateral extent than the portion containing the excess concentration of conductivity modifiers.

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G. H. Olsen et al., Journal of Electronic Materials, 9, 977, (1980).
G. H. Olsen in GaInAsP Alloy Semiconductors, T. P. Pearsall, Editor, John Wiley & Sons (New York 1982), pp. 11-41.
F. Capasso et al., Technical Digest of the 1984 Optical Fiber Conference, Jan. 23-25, 1984, New Orleans, La., pp. 88-89.

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