Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

2008-03-18

2008-03-18

Gurley, Lynne (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S199000, C257S189000, C257S184000, C257SE29180, C257SE29334, C257SE29335

Reexamination Certificate

active

07345325

ABSTRACT:
An avalanche photodiode has improved low-noise characteristics, high-speed response characteristics, and sensitivity. The avalanche photodiode includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a semiconductor multiplication layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a semiconductor light-absorbing layer interposed between the semiconductor multiplication layer and the second conductivity type semiconductor layer. The avalanche photodiode further comprises a multiplication suppressing layer which suppresses multiplication of charge carriers in the semiconductor light-absorbing layer, located between the semiconductor light-absorbing layer and the second conductivity type semiconductor layer.

REFERENCES:
patent: 6104047 (2000-08-01), Watanabe
patent: 6720588 (2004-04-01), Vickers
patent: 7187013 (2007-03-01), Nakaji et al.
patent: 2000-22197 (2000-01-01), None
Watanabe, I. et al.; “Planar-structure Superlattice APDs”,Inst. of Electronics, Information and Communication Engineers, Technical Report of IEICE, pp. 69-74, (Oct.1997).
Li, N. et al.l “InGaAs/InAIAs avalanche photodiode with undepleted absorber”,Applied Physics Letters, vol. 82, No. 13, pp. 2175-2177, (Mar. 31, 2003).
Yonetsu, Hirho, “Optical Communication Element Engineering”, Kokaku Tosho, Inc., (May 20, 2000).

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