1976-05-07
1977-07-19
Edlow, Martin H.
357 16, 357 13, H01L 2714, H01L 29161
Patent
active
040372448
ABSTRACT:
An avalanche photodiode has an avalanche voltage relatively low. In one of the two elements of the junction there is a zone doped more heavily than said element and having the same conductivity type.
REFERENCES:
patent: 3959646 (1976-05-01), de Cremoux
"Thomson-CSF"
Edlow Martin H.
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