1985-08-30
1987-03-31
Edlow, Martin H.
357 30, 357 55, H01L 2990
Patent
active
046546782
ABSTRACT:
The invention is an improved avalanche photodiode having reduced electrical noise arising from spurious surface generation of charge carriers. The avalanche photodiode includes active and neighboring regions adjacent a first surface of a semiconductor body with a gap region therebetween and a channel extending a distance into the semiconductor body from a portion of the second opposed surface opposite the gap region. A P-N junction is formed between regions of opposite conductivity type including a portion thereof over the channel. Since the dopant concentration at the junction is less over the channel, the local avalanche gain over the channel is less, thereby reducing the noise contribution from carriers generated in the gap region.
REFERENCES:
patent: 3403306 (1958-09-01), Haitz et al.
patent: 3714491 (1973-01-01), McIntyre et al.
patent: 4129878 (1978-12-01), Webb
patent: 4383267 (1983-05-01), Webb
patent: 4586066 (1986-04-01), McIntyre
patent: 4586067 (1986-04-01), Webb
Kennedy et al., IRE Transactions on Electron Devices, ED-9 478 (1962).
Lightstone Alexander W.
McIntyre Robert J.
Webb Paul P.
Burke W. J.
Crane Sara W.
Edlow Martin H.
Morris B. E.
RCA Inc.
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