Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

1989-11-17

1991-01-01

James, Andrew J.

357 4, 357 13, 357 16, H01L 2714, H01L 2712, H01L 29161

Patent

active

049822551

ABSTRACT:
An avalanche photodiode comprises an electron multiplication layer of superlattice including InAlAs mixed crystal layers which are lattice-matched with InP, and InGaAsP mixed crystal which are lattice-matched with InP and are provided with a bandgap energy of 1.0 eV to 1.2 eV at the room temperature. In the electron multiplication, a conduction band discontinuity is much greater than a valence band discontinuity to increase a ratio between ion densities .alpha. and .beta. for electron and hole, so that a noise level is decreased and a response characteristic is improved.

REFERENCES:
patent: 4684969 (1987-08-01), Taguchi
patent: 4731641 (1988-03-01), Matsushima

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