Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

1985-03-19

1987-03-17

Sikes, William L.

357 13, 357 16, 357 20, 357 52, H01L 2714, H01L 3100

Patent

active

046511873

ABSTRACT:
An avalanche photodiode having a semiconducting light absorbing layer and an overlying avalanche gain layer of wide band-gap. The usual heavily doped region is formed in the avalanche gain region to form an abrupt p-n junction. Two semiconducting guard rings are formed around the heavily doped region. The doping of both rings provide graded p-n junctions with the avalanche gain layer. The inner guard ring extends more deeply into the avalanche gain layer than either the outer ring or the heavily doped region.

REFERENCES:
Hino et al., "Ge APD Characteristics for Optical Communications", NEC Research & Development, No. 67, pp. 67-72, Oct. 1982.
Sugimoto et al., "Response Characteristics of VPE-Grown InP/InGaAsP/InGaAs-APD", Proceeding of the 1st Spring Meeting of Japan Society of Applied Physics and Related Societies, Issued in Mar. 29, 1984.
InGaAs Avalanche Photodiodes for 1 .mu.m Wavelength Region; Electronics Letters, Jul. 7, 1983, vol. 19, No. 14-T. Shirai, T. Mikawa, T. Kaneda-pp. 534-536.
InGaAsP Heterostructure Avalanche Photodiodes with High Avalanche Gain; Appl. Phys. Lett. 35(3) Aug. 1, 1979-K. Nishida, K. Taguchi, Y. Matsumoto-pp. 251 and 252.

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