Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

1992-04-06

1994-01-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257436, H01L 2990, H01L 2714, H01L 3100

Patent

active

052818446

ABSTRACT:
A novel avalanche photodiode includes an n-type semiconductor substrate, an n-type light-absorbing layer on the substrate, an n-type multiplication layer on the light-absorbing layer, and a p-type light-receiving layer. The multiplication layer includes a plurality of pairs of semiconductor layers, with each pair including one high dopant impurity concentration layer and one low dopant impurity concentration layer.

REFERENCES:
patent: 4684969 (1987-08-01), Taguchi
patent: 5075750 (1991-12-01), Kagawa
"Hikari Tsuushin Soshi Kougaku", Optical Communication Device Engineering, H. Yonezu, Feb. 1984, pp. 418-419.

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