Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

2008-08-07

2010-11-09

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S188000, C257S436000, C257S438000, C257S458000, C257S466000, C257SE27122, C257SE31061, C257SE31063, C257SE31067

Reexamination Certificate

active

07829915

ABSTRACT:
The present invention changes layer polarities of an epitaxy structure of an avalanche photodiode into n-i-n-i-p. A transport layer is deposed above an absorption layer to prevent absorbing photon and producing electrons and holes. A major part of electric field is concentrated on a multiplication layer for producing avalanche and a minor part of the electric field is left on the absorption layer for transferring carrier without avalanche. Thus, bandwidth limit from a conflict between RC bandwidth and carrier transferring time is relieved. Meanwhile, active area is enlarged and alignment error is improved without sacrificing component velocity too much.

REFERENCES:
patent: 4599632 (1986-07-01), Bethea et al.
patent: 5818096 (1998-10-01), Ishibashi et al.
patent: 6720588 (2004-04-01), Vickers
patent: 7045833 (2006-05-01), Campbell et al.
patent: 7557387 (2009-07-01), Ishibashi et al.
patent: 2008/0230862 (2008-09-01), Singh
patent: 2009/0008738 (2009-01-01), Yuan et al.

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