Avalanche photodiode

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

Reexamination Certificate

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Details

C257S183000, C257S184000, C257S199000, C257S438000, C257S603000, C257SE31063

Reexamination Certificate

active

07462889

ABSTRACT:
An avalanche photodiode according to this invention include a light receiving region101surrounded by a ring-shaped trench13, a first electrode11formed on the light receiving region101, a second electrode12formed on the periphery of the ring-shaped trench13surrounding the light receiving region, a first semiconductor layer lying just under the first electrode11, and a second semiconductor layer lying just under the second electrode12. Conductivity types of the first semiconductor and the second semiconductor are identical.

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Isao Waranabe, et al., “High-Speed, High-Reliability Planar-Structure Superlattice Avalance Photodiodes for 10-Gb/s Optical Recievers”, IEEE, Journal of Lightwave Technology, vol. 18, No. 12, Dec. 2000, pp. 2200-2207.
U.S Appl. No. 11/088,770, filed Mar. 25, 2005, Yagyu et al.
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