Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-03-25
2008-12-09
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S183000, C257S184000, C257S199000, C257S438000, C257S603000, C257SE31063
Reexamination Certificate
active
07462889
ABSTRACT:
An avalanche photodiode according to this invention include a light receiving region101surrounded by a ring-shaped trench13, a first electrode11formed on the light receiving region101, a second electrode12formed on the periphery of the ring-shaped trench13surrounding the light receiving region, a first semiconductor layer lying just under the first electrode11, and a second semiconductor layer lying just under the second electrode12. Conductivity types of the first semiconductor and the second semiconductor are identical.
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Ishimura Eitaro
Nakaji Masaharu
Tomita Nobuyuki
Yagyu Eiji
Ho Hoang-Quan
Huynh Andy
Mitsubishi Denki & Kabushiki Kaisha
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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