Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2005-12-30
2008-09-09
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S024000, C438S046000, C438S149000, C257SE31058
Reexamination Certificate
active
07422919
ABSTRACT:
An avalanche photodiode includes at least one crystal layer having a larger band-gap than that of an absorption layer formed by a composition or material different from that of the absorption layer formed on a junction interface between a compound semiconductor absorbing an optical signal and an Si multiplication layer, and the crystal layer may be intentionally doped with n or p type impurities to cancel electrical influences of the impurities containing oxides present on the junction interface of compound semiconductor and surface of Si.
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Fujisaki Sumiko
Matsuoka Yasunobu
Tanaka Shigehisa
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi , Ltd.
Louie Wai-Sing
Opnext Japan, Inc.
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