Avalanche photodiode

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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Details

C438S024000, C438S046000, C438S149000, C257SE31058

Reexamination Certificate

active

07422919

ABSTRACT:
An avalanche photodiode includes at least one crystal layer having a larger band-gap than that of an absorption layer formed by a composition or material different from that of the absorption layer formed on a junction interface between a compound semiconductor absorbing an optical signal and an Si multiplication layer, and the crystal layer may be intentionally doped with n or p type impurities to cancel electrical influences of the impurities containing oxides present on the junction interface of compound semiconductor and surface of Si.

REFERENCES:
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patent: 5650635 (1997-07-01), Razeghi et al.
patent: 6384462 (2002-05-01), Pauchard et al.
patent: 6794631 (2004-09-01), Clark
patent: 2001/0035540 (2001-11-01), Sugiyama et al.
patent: 2002/0117697 (2002-08-01), Tanaka et al.
patent: 02-005489 (1988-06-01), None
patent: 2000-174325 (1999-12-01), None
patent: 2001-313415 (2000-04-01), None
patent: 2002-170983 (2000-11-01), None
patent: 2002-324911 (2001-06-01), None

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