Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2007-08-21
2007-08-21
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S438000
Reexamination Certificate
active
11098558
ABSTRACT:
An objective is to provide an avalanche photodiode that is excellent in device characteristics such as reliability. An avalanche photodiode is provided, which includes a substrate1formed with a light receiving region3on a multiplication layer119, and formed with layers of differing semiconductor type with the multiplication layer119intervening, a ring-shaped groove7formed on the end face of the substrate1on its light-receiving-region side, in such a way that the groove surrounds the light receiving region3, and one or more steps5provided on a side wall of the ring-shaped groove7, in a range of from ¼ to ¾ of the depth of the groove. In the avalanche photodiode described above, because one or more steps provided on the side wall of the ring-shaped groove in the range of from ¼ to ¾ of the depth of the groove, discontinuity at the edge of the ring-shaped groove can be effectively prevented from occurring; consequently, an avalanche photodiode excellent in device characteristics such as reliability can be obtained.
REFERENCES:
patent: 5552629 (1996-09-01), Watanabe
patent: 6229162 (2001-05-01), Watanabe
Isao Watanabe, et al. “High Speed, High-Reliability Planar-Structure Superlattice Avalanche Photodiodes for 10-Gb/s Optical Receivers”, Journal ofLightwave Technology, vol. 18, No. 12, Dec. 2000, pp. 2200-2207.
U.S. Appl. No. 11/088,770, filed Mar. 25, 2005, Yagyu et al.
U.S. Appl. No. 11/098,558, filed Apr. 5, 2005, Yagyu et al.
Ishimura Eitaro
Nakaji Masaharu
Tomita Nobuyuki
Yagyu Eiji
Mitsubishi Denki & Kabushiki Kaisha
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pham Long
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