Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

1978-06-29

1980-07-08

Edlow, Martin H.

357 16, 357 30, H01L 2990, H01L 29161

Patent

active

042120195

ABSTRACT:
An avalanche photodiode comprises a photo-electric conversion region made of a semiconductor having an energy band gap smaller than the photon energy and a carrier multiplying region made of a semiconductor that differs from the semiconductor of the photo-electric conversion region. The different semiconductors for imparting superior functions to the regions are used to improve the quantum efficiency in the photo-electric conversion region and to decrease noise in the carrier multiplying region.

REFERENCES:
patent: 4083062 (1978-04-01), Ohuchi

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