Avalanche photodiode

Details Avalanche photodiode Avalanche photodiode

1997-11-26

1999-06-15

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257186, 257191, 257 21, 257438, H01L 310328

Patent

active

059124784

ABSTRACT:
An avalanche photodiode having an absorption zone, a multiplication zone, and a transition zone disposed between the absorption zone and the multiplication zone, the transition zone being doped and being constituted at least in part by a material of composition that is graded such that the energy bands of the structure are substantially continuous when it is biased, wherein said doping is distributed non-uniformly in said graded composition zone so as to compensate, at least in part, the reverse electric field due to the composition grading of the material in the transition zone.

REFERENCES:
patent: 5539221 (1996-07-01), Tsuji et al.
Le Bellego Y et al., AlInAs/GaInAs Sagm-APD, Third International Conference. Indium Phosphide and Related Materials, Cardiff, UK, Apr. 8-11, 1991, pp. 452-455.
Hanatani S Et al., Flip-Chip Inalas/Ingaas Superlattice Avalanche Photodiodes with Back-Illuminated Structures, Microwave and Optical Technology Letters, vol. 7, No. 3, Feb. 20, 1994, pp. 103-107.
Toshiaki Kagawa et al., Ingaasp-Inalas Superlattice Avalanche Photodiode, IEEE Journal of Quantum Electronic, vol. 28, No. 6, Jun. 1, 1992, p. 1420.
Watanabe I et al., High-Speed and Low-Dark-Current Flip-Chip Inalas/Inalgaas Quaternary Well Superlattice Apd's with 120 GHZ Gain-Bandwidth Product, IEEE Photonics Technology Letters, vol. 5, No. 6, Jun. 1, 1993, pp. 675-677.

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