1986-08-07
1989-06-13
Sikes, William L.
357 4, 357 13, 357 58, H01L 2714, H01L 2990
Patent
active
048397067
ABSTRACT:
A low noise doped quantum well avalanche photodector (APD) having repeated superlattice units. Where the majority carriers are electrons, each unit is formed from p.sup.+ -n.sup.+ layers of a first material having a first ionization threshold, a near intrinsic layer of a second material having a smaller ionization threshold, and a near intrinsic layer of the first material. Such an APD can be fabricated in the GaAs/AlGaAs material system.
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Einschlag Michael B.
Epps Georgia Y.
Polaroid Corporation
Roman Edward S.
Sikes William L.
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