Avalanche photo-diodes

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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357 13, 357 30, H01L 2714

Patent

active

039596460

ABSTRACT:
An avalanche photodiode whose avalanche voltage is relatively low, comprises a detector region, which is p-type doped to sufficiently small depth at its central region in order for the reverse voltage applied across its terminals to develop a field strength in the order of the avalanche field strength there.

REFERENCES:
patent: 3296502 (1967-01-01), Gross et al.
patent: 3452206 (1969-06-01), Biet et al.
patent: 3534231 (1970-10-01), Biard
D'Asaro et al., Electronics, Vol. 39, No. 11, 5/30/66, pp. 94-98.

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