Avalanche photo diode with quantum well layer

Details Avalanche photo diode with quantum well layer Avalanche photo diode with quantum well layer

1986-08-05

1988-03-15

James, Andrew J.

357 4, 357 16, H01L 29201, H01L 3108, H01L 2714

Patent

active

047316411

ABSTRACT:
An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.

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patent: 4383269 (1983-05-01), Capasso
patent: 4390889 (1983-06-01), Capasso et al.
patent: 4439782 (1984-03-01), Holonyak
patent: 4450463 (1964-05-01), Chin
patent: 4473835 (1984-09-01), Forrest et al.
Capasso et al, "The Superlattice . . . Ratio", 7-9 Dec. 81, Conference: IDEM, Wash., D.C., pp. 284-287.
Elec. Lts., 5 Jun. 1980, vol. 16. No. 12, "Impact Ionization . . . ", Chin et al., pp. 467-469.

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