Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1995-06-22
1996-10-29
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257436, 257438, H01L 310328
Patent
active
055699421
ABSTRACT:
An n.sup.- -InGaAs first photo-absorbing layer, an n.sup.+ -InP multiplication layer, and a p.sup.+ -type photo-incident region are formed on the first major surface of an n.sup.+ -InP substrate. An n.sup.- -InGaAs second photo-absorbing layer and a p.sup.+ -InP rear window layer are formed on the second major surface of the substrate. A p-side electrode, an n-side electrode and a transmission carrier absorption electrode are connected to the photo-incident region, the substrate and the rear window layer via contact electrodes, respectively. Since light passing through the first photo-absorbing layer is absorbed in the second photo-absorbing layer, it can be prevented that carriers are generated outside the depletion layer by light reflected by the rear surface. Thus, the trailing response characteristic of the avalanche photodiode (APD) in response to pulse incidental light can be improved.
REFERENCES:
patent: 5179430 (1993-01-01), Torikai
patent: 5179431 (1993-01-01), Shirai
patent: 5406097 (1995-04-01), Kusakabe
NEC Corporation
Tran Minhloan
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