Avalanche photo-diode for producing sharp pulse signal

Details Avalanche photo-diode for producing sharp pulse signal Avalanche photo-diode for producing sharp pulse signal

1993-12-06

1995-04-11

Ngo, Nagn V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257196, 257438, 257459, 257461, H01L 2714, H01L 3100, H01L 29161

Patent

active

054060974

ABSTRACT:
An avalanche photo-diode in the InP-InGaAs-InGaAsP system has a thin main photo-absorbing layer for converting light into carriers, and an auxiliary photo-absorbing layer and a protection layer are provided under the main photo-absorbing structure for absorbing residue of the light without attracting toward electrodes, thereby producing an photo-detecting signal with a sharp trailing edge.

REFERENCES:
patent: 5057891 (1991-10-01), Torikai
patent: 5144381 (1992-09-01), Furuyama et al.
patent: 5204579 (1993-04-01), Tsuji et al.
patent: 5281844 (1994-01-01), Funaba
Patent Abstracts of Japan, vol. 13, No. 110 (E-728), Mar. 16, 1989.

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