1991-05-17
1992-07-21
James, Andrew J.
357 20, 357 30, 357 52, 357 61, H01L 2990
Patent
active
051327473
ABSTRACT:
An avalanche photo diode in which the guard ring portion and the front of the pn junction of the light receiving portion are formed at the same depth from the surface of an InP layer, so that the guard ring performs its desired function.
REFERENCES:
patent: 4729004 (1988-03-01), Sarai et al.
Nishida, K., et al., "InGaAsP Heterostructure Avalanche Photodiodes . . . " Appl Phys Lett Aug. 1979, pp. 251-253.
Taguchi, K., et al. "InP-InGaAsP Planar Avalanche Photodiodes . . . " Electronics Lett, Jul. 1979, pp. 453-455.
Akiba Shigeyuki
Matsushima Yuichi
Sakai Kazuo
Burns Robert E.
Crane Sara W.
James Andrew J.
Kokusai Denshin Denwa Kabushiki Kaisha
Lobato Emmanuel J.
LandOfFree
Avalanche photo diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Avalanche photo diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Avalanche photo diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-847464