Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-06-06
2006-06-06
Loke, Steven (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S380000, C438S979000, C438S983000
Reexamination Certificate
active
07056761
ABSTRACT:
In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and optionally the bias voltage of the gate.
REFERENCES:
patent: 5691558 (1997-11-01), Davies
Beek Marcel ter
Concannon Ann
Hoppet Peter J.
Vashchenko Vladislav
Loke Steven
National Semiconductor Corporation
Vollrath Jurgen
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