Avalanche diode in a bipolar integrated circuit

Details Avalanche diode in a bipolar integrated circuit Avalanche diode in a bipolar integrated circuit

1992-06-26

1994-03-29

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

With means to limit area of breakdown

257603, 257577, 257548, 257511, H01L 2990, H01L 2702

Patent

active

052987884

ABSTRACT:
An avalanche diode is formed in an N layer (20) of a bipolar integrated circuit. The diode comprises a first (P) region (22) and N region (21) disposed inside the first region. The portion of the first region which resides under the N region and close to the interface with the latter has a first doping level. A second (P) region (23) extends under the N region with a second doping level higher than the first close to the junction. A third P region (30) is disposed under the N region and overlaps the second P region. The third region has, at its interface with the N region, a doping level intermediate the first and second doping levels.

REFERENCES:
patent: 4276556 (1981-06-01), Enomoto et al.
patent: 4319257 (1982-03-01), Beasom
patent: 4441114 (1984-04-01), Muggli
patent: 4758872 (1988-07-01), Hada
patent: 4766469 (1988-08-01), Hill
patent: 4910160 (1990-03-01), Jennings et al.
patent: 5027165 (1991-06-01), Doluca

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