Avalanche capability improvement in power semiconductor...

Details Avalanche capability improvement in power semiconductor... Avalanche capability improvement in power semiconductor...

2009-04-29

2011-12-06

Dang, Phuc (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S330000, C438S401000

Reexamination Certificate

active

08072000

ABSTRACT:
A structure of power semiconductor device having dummy cells around edge of active area is disclosed. The UIS test result of said improved structure shows that failed site after UIS test randomly located in active area which means avalanche capability of the semiconductor power device is enhanced by implementation of the dummy cells.

REFERENCES:
patent: 5877528 (1999-03-01), So
patent: 2006/0273385 (2006-12-01), Hshieh
patent: 2008/0035988 (2008-02-01), Hshieh
patent: 2009/0066404 (2009-03-01), Heppenstall et al.
patent: 2009/0250770 (2009-10-01), Su et al.
patent: 2010/0163979 (2010-07-01), Hebert

Affiliated with

Also associated with

Rating

Avalanche capability improvement in power semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Avalanche capability improvement in power semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Avalanche capability improvement in power semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4262562