Avalanche breakdown semiconductor device

Details Avalanche breakdown semiconductor device Avalanche breakdown semiconductor device

1989-12-28

1991-03-12

James, Andrew J.

357 20, 357 38, 357 49, 357 52, H01L 2990, H01L 2906, H01L 2934

Patent

active

049996835

ABSTRACT:
A Zener diode comprising a semiconductor substrate having an n-type region partly exposed at a main force of the substrate, a p.sup.+ -type region disposed contiguous to the n-type region and exposed at the main face of the semiconductor substrate, and an n.sup.+ -type region also exposed at the main face of the substrate and contiguously surrounded by the p.sup.+ -type region besides being contiguous to the p.sup.+ -type region. The arrangement of the semiconductor regions in relation to one another, and an an insulating layer on the main face of the substrate and to a pair of electrodes thereon, is such that the breakdown voltage is free from the influence of temperatures and of the ions contained in the insulating layer.

REFERENCES:
patent: 4071852 (1978-01-01), Kannam
patent: 4271445 (1981-06-01), Hartman et al.
patent: 4323909 (1982-04-01), Valdmann
patent: 4451839 (1984-05-01), Nelson
patent: 4607274 (1986-08-01), Yoshitake
patent: 4797720 (1989-01-01), Lindner et al.
patent: 4807011 (1989-02-01), Nonaka et al.

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