Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Patent
1994-02-28
1995-05-09
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
257605, 257606, 257653, H01L 2972, H01L 2990
Patent
active
054142954
ABSTRACT:
A reference diode is formed in an N-type insulated well. An avalanche diode includes a P-type deep region having a high doping level, beneath which is formed an N-type overlapping buried layer, a P-type deep diffused region contacting a central portion of the deep region, a second, P-type, deep diffused region contacting the periphery of the deep region, an N-type highly doped surface region coating the surface of the first deep diffused region and forming therewith an avalanche junction. At least another structure identical to the avalanche diode structure, without the N-type surface region, forms a resistor between its electrodes.
REFERENCES:
patent: 4651178 (1987-03-01), Avery
Patent Abstracts of Japan, vol. 010, No. 019, Publication No. JP60171515, May 9, 1985.
Le Menn Jacques
Le Roux Gerard
Ngo Ngan V.
SGS-Thomson Microelectronics S.A.
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