Auxiliary apparatus for growing MOCVD

Details Auxiliary apparatus for growing MOCVD Auxiliary apparatus for growing MOCVD

1995-12-05

1997-10-21

Garrett, Felisa

Coating apparatus

Gas or vapor deposition

118728, H01L 2100

Patent

active

056791640

ABSTRACT:
The present invention relates in general to a metal-organic chemical vapor deposition (MOCVD) apparatus used to grow an epi layer, and more particularly to an auxiliary apparatus for growing MOCVD for uniformly growing an epi layer inside a reaction chamber. The auxiliary apparatus includes a molybdenum cylinder that is used to guide the source gas, an inner barrel located within and spaced from the cylinder, and an axially extending separation plate that divides the cylinder and inner barrel into two portions. A flange attaches the auxiliary apparatus to the reaction chamber.

REFERENCES:
patent: 4839145 (1989-06-01), Gale et al.
patent: 5070815 (1991-12-01), Kasai et al.
patent: 5336324 (1994-08-01), Stall et al.
patent: 5456945 (1995-10-01), McMillan et al.
A Novel MOVPE Reactor with a Rotating Substrate; E. Woelk and H. Beneking; Journal of Crystal Growth 93 (1988); pp. 216-219.
A Parametric Investigation of GaAs Epitaxial Growth Uniformity in a High Speed, Rotating Disk MOCVD Reactor; G.S. Tompa et al; Journal of Crystal Growth 93(1988) pp. 220-227.

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