Autozeroing floating-gate amplifier

Amplifiers – With periodic switching input-output

Reexamination Certificate

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C330S086000

Reexamination Certificate

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06958646

ABSTRACT:
An autozeroing floating-gate amplifier (AFGA) is implemented utilizing a programmable gain element, the characteristics of which may be changed by changing the amount of charge stored on a floating gate device.

REFERENCES:
patent: 3893151 (1975-07-01), Bosselaar et al.
patent: 3958236 (1976-05-01), Kelly
patent: 4163947 (1979-08-01), Weedon
patent: 4420871 (1983-12-01), Scheibe
patent: 4622656 (1986-11-01), Kamiya et al.
patent: 4783783 (1988-11-01), Nagai et al.
patent: 4822750 (1989-04-01), Perlegos et al.
patent: 4935702 (1990-06-01), Mead et al.
patent: 4953908 (1990-09-01), Dondlinger
patent: 4953928 (1990-09-01), Anderson et al.
patent: 4962380 (1990-10-01), Meadows
patent: 5059920 (1991-10-01), Anderson et al.
patent: 5068622 (1991-11-01), Mead et al.
patent: 5109261 (1992-04-01), Mead et al.
patent: 5146106 (1992-09-01), Anderson et al.
patent: 5160899 (1992-11-01), Anderson et al.
patent: 5166562 (1992-11-01), Allen et al.
patent: 5177697 (1993-01-01), Schanen et al.
patent: 5331215 (1994-07-01), Allen et al.
patent: 5336936 (1994-08-01), Allen et al.
patent: 5345418 (1994-09-01), Challa
patent: 5376813 (1994-12-01), Delbruck et al.
patent: 5463348 (1995-10-01), Sarpeshkar et al.
patent: 5541878 (1996-07-01), LeMoncheck et al.
patent: 5627392 (1997-05-01), Diorio et al.
patent: 5687118 (1997-11-01), Chang
patent: 5734288 (1998-03-01), Dolazza et al.
patent: 5757219 (1998-05-01), Weedon et al.
patent: 5763912 (1998-06-01), Parat et al.
patent: 5773997 (1998-06-01), Stiegler
patent: 5777361 (1998-07-01), Parris et al.
patent: 5801567 (1998-09-01), Kosiec
patent: 5875126 (1999-02-01), Minch et al.
patent: 5933039 (1999-08-01), Hui et al.
patent: 5939945 (1999-08-01), Thewes et al.
patent: 5986927 (1999-11-01), Minch et al.
patent: 6134182 (2000-10-01), Pilo et al.
patent: 6320788 (2001-11-01), Sansbury et al.
patent: 6664909 (2003-12-01), Hyde et al.
patent: 0 298 618 (1989-01-01), None
Hasler, et al., “An autozeroing Floating-Gate Amplifier”, IEEE Transactions on Circuits and Systems, Analog and Digital Signal Processing, vol. 48, No. 1, Jan. 2001, pp. 74-82.
L. Richard Carley, “Trimming Analog Circuits Using Floating-Gate Analog MOS Memory”, IEEE Journal of Solid-State Circuits 24, No. 6, Dec. 1989, pp. 1569-1575.
Partial International Search for International Application No. PCT/US03/31792, date mailed Apr. 2, 2004.
Diorio, et al., “A High-Resolution Non-Volatile Analog Memory Cell”, IEEE, 1995, pp. 2233-2236.
Gray, et al., “Analysis and Design of Analog Integrated Circuits”, Second Edition, University of California, Berkeley, 1984, pp. 66-71.
Hasler, et al., “An Autozeroing Amplifier Using PFET Hot-Electron Injection”, IEEE, 1996.
Hasler, et al., “Single Transistor Learning Synapses”, Cambridge, MA, The MIT Press, 1995, pp. 817-824.
Hasler, et al., “Single Transistor Learning Synapse with Long Term Storage”, IEEE, 1995, pp. 1660-1663.
Hochet, et al., “Implementation of a Learning Kohonen Neuron Based on a New Multilevel Storage Technique”, IEEE Journal of Solid-State Circuits, vol. 26, No. 3, Mar. 1991, pp. 262-267.
Hollis, et al., “A Neural Network Learning Algorithm Tailored for VLSI Implementation”, IEEE Transactions on Neural Networks, vol. 5, No. 5, Sep. 1994, pp. 784-791.
Hu, et al., “Hot-Electron-Induced MOSFET Degradation-Model, Monitor, and Improvement”, IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, pp. 375-385.
Ismail, et al., “Neural Information Processing II”, Analog VLSI Signal and Information Processing, 1994, pp. 358-413.
R. Colin Johnson, “Neural Team Bares Silicon Brain”, Electronic Engineering Times, Jul. 3, 1995, pp. 30-31.
R. Colin Johnson, “Mead Envisions New Design Era”, Electronic Engineering Times, Jul. 17, 1995, p. 1, 37 and 38.
Lazzaro, et al., “Winner-Take-All Networks of O(N) Complexity”, 1989, pp. 703-711.
Lazzaro, et al., “Systems Technologies for Silicon Auditory Models”, IEEE, Jun. 1994, pp. 7-15.
Leblebici, et al., “Hot-Carrier Reliability of MOS VLSI Circuits”, University of Illinois, Oxide Degradation Mechanisms, 1993, pp. 46-49.
Mead, et al., “MOS Devices and Circuits”, Introduction to VLSI Systems, 1980, pp. 1-5.
Mead, “Differentiators”, Analog VLSI and Neural Systems, Chapter 10, 1989, pp. 163-173.
Minch, et al., “A vMOS Soft-Maximum Current Mirror”, Computation and Neural Systems, IEEE, 1995, pp. 2249-2252.
Minch, et al., “Translinear Circuits Using Subthreshold Floating-Gate MOS Transistors”, Analog Integrated Circuits and Signal Processing, 9, 1996, pp. 167-179.
Sanchez, “Review of Carrier Injection in the Silicon/Silicon-Dioxide System”, IEE Proceedings-G, vol. 138, No. 3, Jun. 1991, pp. 377-389.
Sarpeshkar, et al., “White Noise in MOS Transistors and Resistors”, Circuits and Devices, IEEE, Nov. 1993, pp. 23-29.
Sarpeshkar, et al., “A Low-Power Wide-Linear-Range Transconductance Amplifier”, Analog Integrated Circuits and Signal Processing, vol. 13, No. 1-2, May-Jun. 1997, pp. 123-151.
Tsividis, et al., “Continuous-Time MOSFET-C Filters in VLSI”, IEEE Transactions on Circuits and Systems, vol. CAS-33, No. 2, Feb. 1986, pp. 125-140.
Vittoz, “Dynamic Analog Techniques”, Design of MOS VLSI Circuits for Telecommunications, 1985, pp. 145-170.

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