Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Reexamination Certificate
2006-10-31
2006-10-31
Owens, Douglas W. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
C257S467000, C257S347000
Reexamination Certificate
active
07129557
ABSTRACT:
A thermal monitor diode is provided that comprises a silicon thin film on an insulator mounted on a silicon substrate. An opening extends through the silicon thin film and through the insulator and partially into the silicon substrate and terminates at an end wall. A conductive material is disposed in the opening and extends to the end wall. The substrate has a P/N junction formed therein adjacent the end wall, and an insulating spacer material surrounds the conductive material and is sufficiently thin to allow temperature excursions in the silicon thin film to pass therethrough. The invention also contemplates a method of forming the diode.
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Berndlmaier Zachary E.
Kiewra Edward W.
Radens Carl J.
Tonti William R.
Driggs, Hogg & Fry Co. LPA
Ho Hoang-Quan
Hogg William N.
Owens Douglas W.
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