Automatic transition charge pump for nonvolatile memories

Details Automatic transition charge pump for nonvolatile memories Automatic transition charge pump for nonvolatile memories

1997-03-17

1998-09-01

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518522, 36518523, 36515829, 36518533, G11C 1134

Patent

active

058019871

ABSTRACT:
Clock frequency and number of stages of a charge pump for nonvolatile memories are automatically adjusted to compensate for lower efficiency due to lower power supply, higher temperature, or weaker process. A low voltage detector will cause the charge pump to increase the charge pump's clock frequency and number of stages when a low voltage is detected, making the charge pump's capability constant over a voltage range. A counter timing programming/erasing time will cause the charge pump clock frequency and number of stages to increase when the programming/erasing time exceeds certain thresholds. This boosts the charge pump's drivability for a weaker process, higher temperature, or aged cells.

REFERENCES:
patent: 5428568 (1995-06-01), Kobayashi et al.
patent: 5511026 (1996-04-01), Cleveland et al.
patent: 5594692 (1997-01-01), Yamaguchi
patent: 5629646 (1997-05-01), Menezes et al.

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