Amplifiers – With semiconductor amplifying device – Including gain control means
Patent
1980-02-20
1982-12-28
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including gain control means
330277, 330300, H03G 330, H03F 3193
Patent
active
043664504
ABSTRACT:
An automatic gain control circuit where the direct current potential levels of the gate and the source of a field effect transistor in a preamplifier stage are maintained substantially equal during automatic gain control. In the first embodiment, the gate of the field effect transistor is responsive to a high frequency input signal and the drain provides the amplified high frequency input signals as an output signal. The source is connected to electrical ground by an inductor and is connected to a voltage source having a voltage level controlled in accordance with the automatic gain control signal. The inductor acts to shunt to ground the direct current component of the supply voltage provided to the source. In the second embodiment, the gate of the field effect transistor is responsive to a high frequency input signal and the source is connected to electrical ground. The drain is connected to a voltage source having a voltage level controlled in accordance with the automatic gain control signal and provides the amplified high frequency input signal as an output signal. The d.c. levels of the gate and source are maintained substantially equal and the AGC signal maintains a substantially zero d.c. bias on the field effect transistor to thereby minimize distortion.
REFERENCES:
patent: 4243947 (1981-01-01), Glennon
"Variable Gain RF Amplifier with Superior Gain Control Range and Overload Characteristics", Research Disclosure, May 1979, p. 211.
Mullins James B.
Pioneer Electronic Corporation
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