Automatic frequency tuning of an RF plasma source of an inductiv

Details Automatic frequency tuning of an RF plasma source of an inductiv Automatic frequency tuning of an RF plasma source of an inductiv

1997-07-01

2000-02-22

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723I, 31511121, 216 68, 216 61, H05H 100

Patent

active

060276010

ABSTRACT:
A plasma reactor has a reactor chamber for containing a semiconductor wafer to be processed and gas inlet apparatus for introducing an ionizable gas into the chamber, a variable frequency RF power source, an RF antenna near the chamber, the antenna connected to the RF power source for coupling RF power to the ionizable gas to produce a plasma therefrom, a power sensor connected to the antenna for sensing either (or both) transmitted power to the plasma or reflected power to said source, and a control circuit connected to a control input of the variable frequency RF power source and responsive to the power sensor for changing the frequency of the variable frequency RF power source so as to either increase the transmitted power or decrease the reflected power, so as to provide an accurate RF match instantly responsive to changes in plasma impedance.

REFERENCES:
patent: 5556549 (1996-09-01), Patrick et al.
patent: 5571366 (1996-11-01), Ishii et al.
patent: 5849136 (1998-12-01), Mintz et al.

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