Automated endpoint detection system during chemical-mechanical p

Details Automated endpoint detection system during chemical-mechanical p Automated endpoint detection system during chemical-mechanical p

1997-06-12

1999-11-16

Utech, Benjamin

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

438 8, 438 14, 438692, 156345, B24B 4900, B24B 1412

Patent

active

059856793

ABSTRACT:
An automated endpoint detection process includes obtaining a baseline graph of reflected radiation signal versus time of radiation exposure for a standard integrated circuit substrate surface that is substantially free of residual metal, directing radiation generated from a radiation source through a radiation transparent region of a polishing pad such that radiation is incident on at least a portion of a surface of the integrated circuit substrate, detecting a reflected radiation signal from the integrated circuit substrate surface through the radiation transparent region of the polishing pad, comparing an area under a graph of the reflected radiation signal versus time of radiation exposure obtained for the integrated circuit surface to the baseline graph of the standard integrated circuit substrate surface and thereby determining whether residual metal is present on the surface of the integrated circuit substrate and signaling the chemical-mechanical polishing assembly to stop polishing after polishing for a predetermined time, if the area under the graph of the reflected radiation signal versus time of radiation exposure obtained for the integrated circuit surface is substantially equal to the baseline graph of the standard integrated circuit substrate surface.

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U.S. application No. 08/869,278, Berman, filed Jun. 4, 1997.

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