Au-Ge-Ni ohmic contact for Ga-Al-As compound semiconductor

Details Au-Ge-Ni ohmic contact for Ga-Al-As compound semiconductor Au-Ge-Ni ohmic contact for Ga-Al-As compound semiconductor

1990-08-28

1993-03-09

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257744, 257742, H01L 2354

Patent

active

051929945

ABSTRACT:
On the surface of n-type layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.1) having n-type layer, Au layer is formed as a first layer, and alloying treatment is performed after Ge layer, Ni layer and Au layer are sequentially formed. The first Au layer, the second Ge layer, the third Ni layer and the fourth Au layer have the following thickness:

REFERENCES:
"Contact Resistances of Au-Ge-Ni, Au-Zn and Al to III-V Compounds"-Shih et al-Solid State Electronics, 1972, vol. 15, pp. 1177-1180.

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