Attenuator for high-frequency signal

Details Attenuator for high-frequency signal Attenuator for high-frequency signal

1992-05-22

1993-11-16

Gensler, Paul

Wave transmission lines and networks

Attenuators

333 81A, H01P 122

Patent

active

052627411

ABSTRACT:
A high frequency PIN diode attenuator uses an inductive element in parallel with the PIN diode. The inductor resonates with the parasitic capacitance of the PIN diode to increase the attenuation level.

REFERENCES:
patent: 3138768 (1964-06-01), Evans
patent: 3179816 (1965-04-01), Hall et al.
patent: 3921106 (1975-11-01), Williams
patent: 4019160 (1977-04-01), Kam
patent: 4097827 (1978-06-01), Williams
patent: 4843354 (1979-06-01), Fuller et al.
Garver, Theory of TEM Diode Switching, IRE Trans. on MTT, May 1967, pp. 224-238.

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