Attenuation controlling by means of a monolithic device

Details Attenuation controlling by means of a monolithic device Attenuation controlling by means of a monolithic device

1987-12-23

1990-08-07

Laroche, Eugene R.

Wave transmission lines and networks

Attenuators

333262, 357 15, 357 65, 357 22, H01P 122

Patent

active

049471422

ABSTRACT:
A monolithic device for controlling the transmission of RF energy. The device comprises doped regions selectively implanted along two lateral lines in a buffer layer disposed on a semi-insulating substrate. Two ground conductors are disposed on said doped region to form ohmic contacts therewith, and a signal conductor is disposed directly on the buffer layer between the two ground conductors to form a Schottky contact. The buffer layer is responsive to a DC potential applied between the signal and ground conductors for selectively attenuating RF energy transmitted through the device.

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patent: 4587541 (1986-05-01), Dalman et al.
patent: 4593307 (1986-06-01), Rupprecht et al.
patent: 4675620 (1987-06-01), Fullerton
patent: 4739289 (1988-04-01), Cripps

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