Attenuation circuitry using gate current control of FET conducti

Details Attenuation circuitry using gate current control of FET conducti Attenuation circuitry using gate current control of FET conducti

1995-09-07

1998-08-18

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

327307, H03K 508

Patent

active

057962863

ABSTRACT:
A GaAs MESFET that turns on and off to control the gain is connected to an attenuation circuit composed of a plurality of resistors connected between the input and output terminals and a reference potential terminal. By injecting a specific amount of current into the gate of the FET, the voltage between the gate and the source and drain is turned into the ON-state voltage of the Schottky junction determined by the injected current and the cross section of the FET, thereby turning on the FET. By applying a voltage lower than the threshold voltage between the gate and the source and drain of FET, the FET is turned on.

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