Attenuating type phase shifting mask and method of manufacturing

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430321, 430326, 430394, G03F 900

Patent

active

054298970

ABSTRACT:
An attenuating type phase shifting mask according to the present invention includes an attenuating type phase shifting pattern, and an attenuating type auxiliary phase shifting pattern having a transmitting portion and a phase shifter portion formed at a predetermined position at the periphery of attenuating type phase shifting pattern, wherein attenuating type auxiliary phase shifting pattern includes a pattern having a resolution smaller than a limit of resolution of an exposure apparatus. Whereby, exposure of the region around a normal exposure region is prevented, and also exposure of the region adjacent to the exposure region is prevented when conducting exposure successively with a substrate moved.

REFERENCES:
patent: 4902899 (1990-02-01), Lin et al.
patent: 5288569 (1994-02-01), Lin
"Imaging Characteristics of Multi-Phase-Shifting and Halftone Phase-Shifting Masks", by Tsuneo Terasawa et al, JJAP Series 5 Proceedings of 1991 International Micro Process Conference, pp. 3-9.

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