Attenuating phase shift photomasks

Details Attenuating phase shift photomasks Attenuating phase shift photomasks

1999-04-20

2000-08-01

Codd, Bernard

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

428421, 428429, G03F 900

Patent

active

06096460&

ABSTRACT:
Transmissive attenuated embedded phase shifter photomasks comprising at least one polymeric material, preferably an amorphous fluoropolymer or an amorphous fluoropolymer doped with a fluorine functionalized organosilane, and organosilicates, or combinations thereof, the polymeric material having: (a) an index of refraction (n) in a range from 1.2 to 2.0, preferably in the range from 1.26 to 1.8, at a selected lithographic wavelength below 400 nm; and (b) an extinction coefficient (k) in a range from 0.04 to 0.8, preferably in the range from 0.06 to 0.59 at the selected lithographic wavelength below 400 nm.

REFERENCES:
patent: 4890309 (1989-12-01), Smith et al.
patent: 5100503 (1992-03-01), Allman et al.
patent: 5354632 (1994-10-01), Dao et al.
patent: 5415953 (1995-05-01), Alpay et al.
patent: 5459002 (1995-10-01), Alpay et al.
patent: 5726247 (1998-03-01), Michalczyk
Lin, B.J., "The Attenuated Phase-Shifting Mask", Solid State Technology, pp. 43-47 (Jan. 1992).

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