Attenuating embedded phase shift photomask blanks

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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428433, G03F 900

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active

058979778

ABSTRACT:
Attenuating embedded phase shift photomask blanks capable of producing a 180.degree. phase shift with an optical transmissivity of at least 0.0001 at wavelengths <400 nm comprise alternating layers, either periodic or aperiodic, of an optically transmissive material and an optically absorbing material and are made by depositing alternating layers of optically transmissive material and optically absorbing material on a substrate, preferably by vapor deopsition.

REFERENCES:
patent: 5106703 (1992-04-01), Carcia
patent: 5415953 (1995-05-01), Alpay et al.
patent: 5459002 (1995-10-01), Alpay et al.
Levenson, M.D., Wavefront Engineering For Photolithography, Physics Today, 28-36, Jul. 1993.
Stix, G., Toward "Point One", Scientific American, 90-95, Feb. 1995.aa
McLane, G.F., et al., Magnetron reactive ion etching of AIN and InN in BCI.sub.3 plasmas, Journal of Vacuum Science & Technology, A13(3), 724-726, Sep. 1995.
Shih, K.K. et al., Thin film materials for the preparation of attenuating phase shift masks, Journal of Vacuum Science & Technology, B12(1), 32-36, Jan./Feb. 1994.
Mileham, J.R. et al., Wet chemical etching of AIN, Appl. Phys. Lett., 67(8), 1119-1121, Aug. 1995.
Kalk, F.D. et al. Attenuated phase-shifting photomasks fabricated from Cr-based embedded shifter blanks, Photomask and X-Ray Mask Technology, SPIE vol. 2254, 64-70, Apr. 1994.
Shul, R.J. et al., High rate electron cyclotron resonance etching of GaN, InN, and AIN, Journal of Vacuum Science Technology, B13(5), 2016-2021, Sep./Oct. 1995.
Carcia, P.F., Evolution of Metal Multilayers For MO Recording, Proceeding of Magneto-Optical Recording International Symposium '94, Magn. Soc. Jpn., vol. 19, 5-16 Mar. 1994.
P.F. Carcia et al., Materials screening for attenuating embedded phase-shift photoblanks for DUV and 193 nm photolithography, Proceedings of 16th Annual Symposium on Photomask Technology and Management, 2884, 255-263, Sep. 1996.

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