Attenuating embedded phase shift photomask blanks

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G06F 900

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active

058979760

ABSTRACT:
Attenuating embedded phase shift photomask blanks capable of producing a phase shift of 180.degree. and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths <400 nm comprise at least one layer of an aluminum compound and at least one component that is more optically absorbing than the aluminum compound at selected lithographic wavelengths <400 nm and are made by depositing at least one layer of an aluminum compound and at least one component that is more optically absorbing than the aluminum compound onto a substrate.

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Levenson, M.D., Wavefront Engineering For Photolithography, Physics Today, 28-36, Jul. 1993.
Stix, G., Toward "Point One", Scientific American, 90-95, Feb. 1995.
McLane, G.F. et al., Magnetron reactive ion etching of AIN and InN in BCl.sub.3 plasmas, Journal of Vacuum Science & Technology, A13(3), 724-726, Jan. 1995.
Shih, K.K. et al., Thin film materials for the preparation of attenuating phase shift masks, Journal of Vacuum Science & Technology, B12(1), 32-36, Jan./Feb. 1994.
Mileham, J.R. et al., Wet chemical etching of AIN, Appl. Phys. Lett., 67(8), 1119-1121, Aug. 1995.
Kalk, F.D. et al., Attenuated phase-shifting photomasks fabricated from Cr-based embedded shifter blanks, Photomasks and X-Ray Mask Technology, SPIE vol. 2254, 64-70, Apr. 1994.
M. Takekazu et al. (Dainippon Printing Co Ltd), Halftone Phase Shift Photomask and Blank For Halftone Phase Shift Photomask, Patent Abstracts of Japan, Publication No. 08272074, Oct. 18, 1996.
B. W. Smith et al., Development and characterization of nitride and oxide based composite materials for sub 1.18 .mu.m attenuated phase shift masking, Microelectronic Engineering, 35, No. 1-4, 201-204, Feb. 1997.

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