Attenuated phase shifting mask with buried absorbers

Details Attenuated phase shifting mask with buried absorbers Attenuated phase shifting mask with buried absorbers

1994-11-21

1996-01-02

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430323, 430224, G03F 900

Patent

active

054807476

ABSTRACT:
An attenuated phase shifting mask has absorbers embedded (buried) in the mask substrate, instead of on the surface of the substrate. The buried absorbers allow for controlling attenuation and phase shifting parameters. The material composition and the thickness of the absorber regions determine the amount of attenuation that is to be achieved, as well as phase shifting in some instances. In other instances, offset distances of the absorbers from the surface of the mask control the phase shift. Light scattering and diffraction is reduced or eliminated by having the absorbers below the surface of the mask. By reducing light scattering and distortion, the mask of the present invention allows for PSM lithography techniques to be extended to ranges of shorter wavelength.

REFERENCES:
patent: 4414317 (1983-11-01), Culp et al.
patent: 4434224 (1984-02-01), Yoshikawa et al.
patent: 4890309 (1989-12-01), Smith et al.
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5217830 (1993-06-01), Lowrey
patent: 5225035 (1993-07-01), Rolfson
patent: 5288569 (1994-02-01), Lin
"Chrome dry etching for photomask fabrication"; W. W. Flack et al.; SPIE vol. 1809, 12th Annual BACUS Symposium (1992); pp. 85-96.

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