Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1996-07-19
1999-07-27
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430396, G03F 900
Patent
active
059288132
ABSTRACT:
An attenuated phase shift mask comprises a first layer having a thickness to provide a transmission in the range of about 3 to 10% formed on a transparent substrate and a second layer comprising a transparent material having a thickness to provide a desired phase shift, formed on said first layer. For a phase shift of 180.degree. and i-line wavelength (365 nm) where chromium is used as the first layer, then a thickness within the range of about 25 to 75 nm is employed; where silicon dioxide is used as the second layer; then a thickness of about 400 to 450 nm is employed. While the oxide may be dry-etched, an isotropic wet etch provides superior aerial images.
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M.D. Levenson et al, "Improving Resolution in Photolithography with a Phase-Shifting Mask", IEEE Transactions on Electron Devices, vol. ED-29, No. 12, pp. 1828-1836 (Dec. 1982).
R.A. Ferguson eta l, "Impact of Attenuated Mask Topography on Lithographic Performance", SPIE Meeting, Mar. 1994, paper No. 2197-12.
M. Nakajima et al, "Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSIO and MoSION film", SPIE Meeting, Mar. 1994, paper No. 2197-10; and.
A. Wong et al, "Phase-Shifter Edge Effects on Attenuated Phase-Shifting Mask Image Quality", SPIE Meeting, Mar. 1994, paper No. 2197-11.
Krivokapic Zoran
Spence Christopher A.
Advanced Micro Devices , Inc.
Rosasco S.
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