Attenuated phase shift mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430396, G03F 900

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active

059288132

ABSTRACT:
An attenuated phase shift mask comprises a first layer having a thickness to provide a transmission in the range of about 3 to 10% formed on a transparent substrate and a second layer comprising a transparent material having a thickness to provide a desired phase shift, formed on said first layer. For a phase shift of 180.degree. and i-line wavelength (365 nm) where chromium is used as the first layer, then a thickness within the range of about 25 to 75 nm is employed; where silicon dioxide is used as the second layer; then a thickness of about 400 to 450 nm is employed. While the oxide may be dry-etched, an isotropic wet etch provides superior aerial images.

REFERENCES:
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patent: 5330862 (1994-07-01), Tabuchi et al.
patent: 5389474 (1995-02-01), Iguchi et al.
M.D. Levenson et al, "Improving Resolution in Photolithography with a Phase-Shifting Mask", IEEE Transactions on Electron Devices, vol. ED-29, No. 12, pp. 1828-1836 (Dec. 1982).
R.A. Ferguson eta l, "Impact of Attenuated Mask Topography on Lithographic Performance", SPIE Meeting, Mar. 1994, paper No. 2197-12.
M. Nakajima et al, "Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSIO and MoSION film", SPIE Meeting, Mar. 1994, paper No. 2197-10; and.
A. Wong et al, "Phase-Shifter Edge Effects on Attenuated Phase-Shifting Mask Image Quality", SPIE Meeting, Mar. 1994, paper No. 2197-11.

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